Surround gate access transistors with grown ultra-thin bodies

ABSTRACT

A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to avoid difficulties with forming sub-lithographic structures via etching processes. The body has ultra-thin dimensions and provides controlled short channel effects with reduced need for high doping levels. Buried data/bit lines are formed in an upper surface of a substrate from which the transistors extend. The transistor can be formed asymmetrically or offset with respect to the data/bit lines. The offset provides laterally asymmetric source regions of the transistors. Continuous conductive paths are provided in the data/bit lines which extend adjacent the source regions to provide better conductive characteristics of the data/bit lines, particularly for aggressively scaled processes.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to the field of semiconductor memory arrays and,more particularly, to arrays with access transistors having grownultra-thin bodies.

2. Description of the Related Art

Ongoing scaling of metal oxide semiconductor field effect transistor(MOSFET) technology to the deep sub-micron region where channel lengthsare less than 0.1 micron (100 nanometers or 1,000 Å) causes significantproblems in conventional transistor structures. Generally, junctiondepth should be much less than the channel length, and thus for achannel length of, for example 1,000 Å, this implies junction depths onthe order of a few hundred Angstroms. Such shallow junctions aredifficult to form by conventional implantation and diffusion techniques.

FIG. 1 illustrates general trends and relationships for a variety ofdevice parameters with scaling by a factor k. As another example, withan aggressive scaling factor, extremely high levels of channel dopingare required to suppress undesirable short channel effects, such asdrain induced barrier lowering (DIBL), threshold voltage roll off, andsub-threshold conduction. Sub-threshold conduction is particularlyproblematic in dynamic random access memory (DRAM), as it significantlyreduces the charge storage retention time of the capacitor cells.Extremely high doping level generally results in increased leakage andreduced carrier mobility. Thus making the channel shorter to improveperformance is offset or negated by the lower carrier mobility andhigher leakage. This leakage current is a significant concern andproblem in low voltage and low power battery operated complimentarymetal oxide semiconductor (CMOS) circuits and systems, particularly inDRAMs.

FIG. 2 shows that if low voltages are used for this low power operation,there is a problem with threshold voltages and standby leakage currentbeing of large enough value to degrade overall circuit performance. Forexample, to achieve significant overdrive and reasonable systemswitching speeds, the threshold voltage magnitudes are desirably small,in this example near 0 volts. However the transistor, such as an accesstransistor, will always have a large sub-threshold leakage current.Various technologies have been employed to allow low voltage operationwith deep sub-micron CMOS transistors that can have relatively largevariations in threshold voltage, yet still have relatively lowsub-threshold leakage currents at standby.

For example, one technique used in scaling down transistors is referredto as dual-gated or double-gated transistor structures. The terminologygenerally employed in the industry is “dual-gate” if the transistor hasa front gate and a back gate which can be driven with separate andindependent voltages and “double-gated” to describe structures whereboth gates are driven with the same potential. In certain aspects, adual-gated and/or double-gated MOSFET offers better devicecharacteristics than conventional bulk silicon MOSFETs. Because a gateelectrode is present on both sides of the channel, rather than only onone side as in conventional planar MOSFETs, the electrical fieldgenerated by the drain electrode is better screened from the source endof the channel than in conventional planar MOSFETs, as illustratedschematically by the field lines in FIG. 3.

This can result in an improved sub-threshold leakage currentcharacteristic, as illustrated schematically in FIG. 4. The dual-gateand/or double-gate MOSFET turns off and the sub-threshold current isreduced more quickly as the gate voltage is reduced. However, eventhough dual gate and/or double gate structures offer advantages overconventional bulk silicon MOSFETs, there remains a desire for continuedimprovement in device performance with continued aggressive scaling.More particularly, there is a need to provide very thin transistorbodies that can control short channel effects with reduced need forextremely high doping levels to avoid the aforementioned difficulties.There is also a need for devices that can be more easily and reliablyfabricated.

SUMMARY OF THE INVENTION

The aforementioned needs are satisfied by the invention which in oneembodiment comprises a transistor comprising a vertical annularsemiconductive transistor body, a surround gate structure formed aroundthe annular transistor body, a source region formed adjacent a lowerportion of the body, and a drain region formed adjacent an upper portionof the body such that the transistor defines a field effect transistor.

Another embodiment comprises An access array for memory cells comprisinga semiconductive substrate, a plurality of first conductors formed in afirst direction along a surface of the substrate, a plurality oftransistors formed on the surface of the substrate so as to be offsetfrom associated first conductors and at least partially connected to theassociated first conductors, and a plurality of second conductors formedin a second direction and electrically connected with associatedtransistors such that the transistors can be turned on and off byapplication of appropriate potentials to the second conductors.

Yet another embodiment comprises a method of forming transistorstructures comprising forming a pillar vertically extending from asurface of a substrate, growing a single crystalline semiconductivetransistor body to extend vertically around the pillar, forming asurround gate structure around the transistor body, forming a sourceregion adjacent lower portions of the transistor body, and forming adrain region adjacent an upper portion of the transistor body.

Thus, various embodiments provide an annular, vertical transistor bodyhaving ultra-thin dimensions. The transistor body can be grown whichavoids difficulties in sub-lithographic etching based process. Thetransistors can also be offset from alignment with buried data/bit lineswhich provides a continuous conductive path extending alongside sourceregions of the transistors. The continuous conductive path providesimproved conductive characteristics for the data/bit lines, particularlyover extended distances. These and other objects and advantages of theinvention will be more apparent from the following description taken inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is schematic illustration of general relationships of variousdevice parameters/characteristics for a scaling factor k;

FIG. 2 is a graph illustrating sub-threshold leakage in a conventionalsilicon MOSFET;

FIG. 3 is a schematic illustration of a known dual-gate MOSFET;

FIG. 4 is a graph illustrating sub-threshold conduction characteristicsof conventional bulk silicon MOSFETs and of dual-gate and/or double gateMOSFETs;

FIG. 5 is a circuit schematic illustration of one embodiment of a memoryarray;

FIG. 6 is a top view of one embodiment of a memory access array withaccess transistors having grown ultra-thin bodies;

FIG. 7 is a perspective view of one embodiment of a memory access arraywith access transistors having grown ultra-thin bodies;

FIGS. 8A, 8B, and 8C are top, front section, and rear section viewsrespectively of one embodiment of an access transistor with a grownultra-thin body;

FIGS. 9A, 9B, and 9C are side, front, and rear views respectively ofsurface conduction channels arising in certain embodiments underappropriate applied potentials;

FIG. 10A illustrates another embodiment of an ultra-thin body transistorwherein the body is configured generally as a solid pillar;

FIG. 10B illustrates another embodiment of a grown ultra-thin bodytransistor wherein the body is configured generally as an annularstructure encompassing a vertical pillar; and

FIGS. 11 through 14 illustrate embodiments of methods of fabrication ofa memory array.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Description of various embodiments of the invention will now bedescribed with respect to the drawings wherein like referencedesignators refer to like structures, elements, and/or processesthroughout. It should be understood that the illustrations are schematicin nature and should not be interpreted as being to scale. FIG. 5 is aschematic circuit diagram of one embodiment of a memory array 100. Thememory array 100 is configured for storage and retrieval of digital datain a plurality of memory cells 102 comprising the array 100. In thisembodiment, each memory cell 102 comprises an access transistor 104connected to a charge storage device 106. In one embodiment, the chargestorage device 106 comprises a stacked storage capacitor which will bedescribed in greater detail below. The charged storage devices 106 storethe digital data wherein presence of a predetermined quantity of chargeon a charge storage device 106 corresponds to a first data state andwherein absence of the predetermined charge corresponds to a second datastate. The access transistors 104 are connected to corresponding chargestorage devices 106. This provides a selectable electrically conductivepath to the charge storage device 106 to provide a path to the chargestorage devices 106 for write operations, as well as to evaluate thequantity of charge stored on the charge storage devices 106 in readoperations.

The array 100 also comprises one or more row decoder modules 110 whichare connected to a plurality of word lines 112. Each word line 112 isconnected to a corresponding plurality of access transistors 104. Theword lines 112 with corresponding access transistors 104 are arranged inparallel in what is generally referred to as columns. The word lines 112conduct electrical signals which turn on or turn off the correspondingcolumn of access transistors 104 for read and write operations to thecorresponding memory cells 102.

The array 100 also comprises one or more column decoder modules 114which comprise a plurality of sense amplifiers. The one or more columndecoders 114 are connected to a plurality of data/bit lines 116. Thedata/bit lines 116 are also connected to a plurality of accesstransistors 104. The data/bit lines 116 with the associated accesstransistors 104 are arranged in parallel in what is generally referredto as a row configuration. Thus, the word lines 112 and data/bit lines116 are arranged in intersecting directions and, in one particularembodiment, are arranged so as to define a generally rectangular arrayof the memory cells 102. The data/bit lines 116 also conduct signals tothe one or more column decoder modules 114 wherein the signals areindicative of the quantity of charge stored on the associated chargestorage devices 106. Similarly, the data/bit lines 116 can be utilizedto provide the predetermined charge quantity to a charge storage device106 or to drain the charge from the charge storage device 106 to affectwrite operations. Thus, activation of a selected word line 112 and adata bit line 116 provides access to the memory cell 102 at theintersection of these selected word line 112 and data/bit line 116.

The one or more row decoder modules 110 and one or more column decodermodules 114 are also connected to an address buffer 120. The addressbuffer 120 can provide electrical signals corresponding to particulardata states to the individual memory cells 102 of the array 100 via therow decoder modules 110 and column decoder modules 114 for writeoperations. Similarly, the address buffer 120 can receive signalscorresponding to the stored data state of the individual memory cells102 again via the row decoders 110 and column decoders 114 in readoperations. The address buffer 120 is configured for interface with oneor more other systems in manners well understood by those of ordinaryskill.

FIG. 6 illustrates schematically in a top view one embodiment of accesstransistors 104 of an array 100. In this embodiment, the accesstransistors 104 comprise a vertically extending central pillar 130 (seealso FIGS. 7, 8 b, and 8 c). The central pillar 130 extends upward froman upper surface of a semi-conductive substrate 150. In one particularembodiment, the central pillar 130 has a generally rectangular or squarecross-section. However in other embodiments the pillar 130 describes agenerally circular or oval cross-section, a triangular cross-section, orother shape appropriate to the requirements of particular applications.

In this embodiment, the access transistors 104 also comprise an annulartransistor body 132 which substantially surrounds or encompasses thecentral pillar 130 along the vertical sides and top of the pillar 130.In one embodiment, the annular transistor body 132 comprises siliconwhich is doped to approximately 5×10¹⁷/cm² with boron. The annulartransistor body 132 provides an active transistor region for a fieldaffect transistor structure which will be described in greater detailbelow.

In one particular embodiment, the central pillar 130 has a lateral orhorizontal dimension D₁ of approximately 80 nm or 0.08 μm. The annulartransistor body 132 has an outer lateral or horizontal dimension D₂ ofapproximately 120 nm or having an ultra-thin wall thickness T ofapproximately 20 nm. Thus, the annular transistor body 132 describes agenerally vertical hollow annular structure having a wall thickness ofapproximately 20 nm. In one embodiment, the annular transistor body 132also has a height H of approximately 100 nm.

The access transistors 104 also comprise a gate dielectric 134surrounding the annular transistor body 132. The gate dielectric 134describes a generally annular vertically extending structure in contactwith the body 132. The gate dielectric 134 has similar cross-section tothe annular transistor body 132. The access transistors 104 alsocomprise a gate conductor 136 which surrounds or encompasses the gatedielectric 134. In one embodiment, the gate conductor 136 comprisesconductive doped polycrystalline silicon (polysilicon). The gateconductor 136 is connected at opposed vertical or faces S1 and S2 tocorresponding word lines 112. In one particular embodiment, each wordline 112 comprises a separate first word line 112 a and a second wordline 112 b. In certain embodiments, the word lines 112 a and 112 b aredriven at the same voltage to apply or remove potential from thecorresponding gate conductors 136 in concert. In other embodiments, theword lines 112 a and 112 b can be independently driven.

A dielectric layer or region 140 is positioned between adjacentindividual access transistors 104 to electrically isolate each accesstransistor 104 from adjacent neighboring access transistors 104. Incertain embodiments, the gate dielectric structures 134 and dielectriclayers 140 comprise a single materially continuous layer or region andin other embodiments, the gate dielectric structures 134 and dielectriclayer or regions 140 comprise separate structures.

As can also be seen in FIGS. 6, 7, and 8C, in one embodiment the accesstransistors 104 are offset from overlying centered alignment with thedata/bit lines 116. In one particular embodiment, the access transistors104 are offset laterally by a distance of approximately half the widthof the access transistor 104 along the directions of the word lines 112such that approximately half of the access transistor 104 overlies thecorresponding data bit line 116 with the remaining half extending beyondthe edge or boundary of the corresponding data/bit line 116. Thisprovides a region of the data/bit line 116 substantially isolated fromthe transistor action of the access transistors 104 to improve theconduction characteristics of the data/bit lines 116 as will bedescribed in greater detail below.

FIGS. 8A, 8B, and 8C illustrate top, front, and side section viewsrespectively of one embodiment of access transistor 104 in greaterdetail. As shown in FIG. 8B, the annular transistor body 132, in thisembodiment, encompasses or surrounds the central pillar 130 alongvertical sides thereof as well as along an upper surface thereof. Inthis embodiment, the annular transistor body 132 comprises a singlecrystalline body region 142 extending upwards from the upper surface ofthe substrate 150 along the sides or vertical surfaces of the centralpillar 130. In one embodiment described in greater detail below, thesingle crystalline body region 142 comprises a grown region of siliconwhich is grown along the sides of the vertically extending centralpillar 130.

The annular transistor body 132 also comprises a multiple grain region144 positioned generally at the top or upper regions of the transistorbody 132. The multiple grain region 144 comprises a region of thetransistor body 132 wherein multiple silicon crystalline structuresmerge to define a plurality of grain boundaries of a polycrystallinesilicon region. Formation of a conduction channel for the transistors104 occurs substantially in the single crystalline body region 142rather than in the multiple grain region 144. Thus, the grain boundarieshave reduced negative effects on the operational performance of theaccess transistor 104 as the multiple grain region 144 is utilized toform the drain region 152 which contacts an overlying charge storagedevice 106 via a drain contact 154.

The transistor body 132 as partially overlying the data/bit lines 116also define source regions 146 positioned generally at the lower regionsof the transistor body 132. The drain regions 152 are positioned atupper regions of the transistor body 132 and in certain embodiments atleast partially comprise the multiple grain region 144. As can be seenin FIG. 8C, as the access transistor 104 is offset from alignment atopthe corresponding data/bit line 116, the source region 146 extends alongthe lower extent of the transistor body 132 along one side 156 of thetransistor body 132 and across approximately half of the adjacent sides.The source region 146 generally is defined by the portions of the lowerregions of the transistor body 132 which overly the associated data/bitline 116. Thus, the source region is present on a first side of thetransistor body 132 and substantially absent on the opposite side andextends approximately halfway in-between.

A continuous conductive path 170 (FIG. 8C) is also defined in thedata/bit lines 116 extending adjacent the source regions 146. Thecontinuous conductive path 170 provides conductive regions of thedata/bit lines 116 that are not significantly involved in the transistoroperation of the transistors 104. This improves the conductioncharacteristics of the data/bit lines 116 and facilitates furtheraggressive scaling of the array 100.

As illustrated schematically in FIGS. 9A, 9B, and 9C in side, front, andback views respectively, the source region 146 defines a relativelynarrow region in lateral extent as compared to a relatively wide drainregion 152. Again, the source region 146 is generally defined by theoverlap of the access transistor 104 and more particularly thetransistor body 132 over the underlying data/bit line 116. Underappropriate application of operating potentials by the word lines 112and data/bit lines 116, conduction channels 160 will form along thesurface of the transistor body 132 and more particularly along thesingle crystalline body region 142. Current will thus fan out from thesource region configured generally as a U or C-shaped region atapproximately one-half the perimeter of the lower extent of thetransistor body 132 upwards to the generally larger and planar drainregion 152. The rearward or back side portion of the transistor body 132does not overlap the underlying data/bit line 116 and thus hassignificantly less contribution to the formation of the conductionchannels 160. However, potential applied via the word lines 112 will becommunicated by the surround gate structure 138 to more effectivelycontrol potential in the central pillar 130 for more reliable switchingof the transistor 104 off and on.

FIGS. 10A and 10B illustrate schematically two embodiments of accesstransistor 104 and illustrate generally electron potential distributionsin the access transistor 104. More particularly, FIG. 10A illustrates inside section view one embodiment of the access transistor 104 whereinthe central pillar 130 comprises oxide and the transistor body 132 isconfigured as an annular vertically extending structure encompassing thecentral pillar 130. In this embodiment, the annular transistor body 132comprises doped silicon. The pillar 130 comprising silicon oxide has alower dielectric constant than the silicon forming the transistor body132. In addition, there are substantially no ionized impurity dopantatoms in the oxide pillar 130 in contrast to the composition of theannular transistor body 132. This leads to differences in the potentialdistributions and indicated gate potentials for the embodimentsillustrated in FIGS. 10A and 10B as described below.

FIG. 10B illustrates another embodiment of an access transistor 104′wherein the central pillar 130 and transistor body 132 are merged into asingle ultra thin pillar which also provides the transistor body 132 ofthe access transistor 104′. As can be seen in a comparison of FIGS. 10 aand 10 b, potential variations through the silicon pillar 130, 132 ofthe access transistor 104′ will be greater than in the separatetransistor body 132 and central oxide pillar 130. In both embodiments,however, transistor action of the access transistor 104 and 104′ will besimilar and the conduction channels 160 will form at the surface of thetransistor body 132 or combined pillar 130′ and transistor body 132′underneath the adjacent gate dielectric structures 134. The operationalcharacteristics of the access transistor 104 will describe a generallysteeper sub-threshold slope than for the access transistor 104′.

The combined pillar 130′ and transistor body 132′ of the accesstransistor 104′ will also typically exhibit more body charge than in theaccess transistor 104 wherein the central pillar 130 comprises oxide andthe transistor body 132 is separate and comprises silicon. Thus,generally a lower gate voltage will be required for operation of theaccess transistor 104 as compared to the access transistor 104′. Thedifference in appropriate gate voltage to operate the access transistors104, 104′ will vary depending on the specifics of particularapplications. In one embodiment, approximately 30 percent lower gatevoltages would be indicated for the embodiment of access transistor 104,such as illustrated in FIG. 10A having a central pillar 130 comprisingoxide with an annular transistor body 132 as compared to the appropriategate voltages for the embodiment of access transistor 104′, such asillustrated in FIG. 10B. The lower gate voltage typically required tooperate the embodiment of access transistor 104, such as illustrated inFIG. 10A, is obtained at the expense of increased steps in thefabrication of this embodiment, as will be described in greater detailbelow.

FIGS. 11 through 14 illustrate embodiments of a method 200 of forming amemory array 100 including the access transistors 104 previouslydescribed. As shown in FIG. 11, an implant procedure 202 is performed toform the plurality of data/bit lines 116. In one particular embodiment,the implant 202 is performed with implant parameters of approximately1×10¹⁵/cm² of boron at approximately 20 keV. The pillars 130 are thenformed to extend upwards from an upper surface of the substrate 150 andto at least partially overlie the underlying implanted data/bit lines116. In one particular embodiment, the pillars 130 are formed such thatapproximately one-half of the pillar 130 overlies the associated varieddata/bit line 116. Additional details of embodiments of forming thepillars 130 may be found in the co-pending application Ser. No.11/129,502 filed May 13, 2005 which is incorporated herein by referencein its entirety.

FIG. 12 illustrates subsequent steps in one embodiment of the method 200wherein a layer of amorphous silicon is deposited as indicated by thereference number 204 so as to overly the upper surface of the substrate150 as well as the plurality of vertically extending pillars 130. Thethickness of amorphous silicon doped with boron 204 deposited will varydepending on the indications of particular applications, however, in oneembodiment, comprises a deposition of approximately 20 nm. The amorphoussilicon 204 is then recrystallized as indicated by the reference number206 to form the single crystalline body region 142 by a solid phaseepitaxial growth process 206. In one embodiment, the solid phaseepitaxial growth process 206 proceeds at parameters of approximately750° C. Since the pillars 130 are relatively short, in certainembodiments having a height H of 100 nanometers or less, the solid phaseepitaxial growth 206 can readily grow the single crystalline structure142 over such relatively short distances. As previously noted, incertain embodiments at the upper regions of the transistor body 132, amultiple grain region 144 is formed wherein the amorphous silicon 204 istransformed to a polycrystalline silicon structure having grainboundaries. However, this multi-grain region 144 will have relativelybenign impact on the overall performance of the access transistor 104 asthe drain contact 154 to an overlying charge storage device 106 isformed in this multiple grain region 144.

FIG. 13 illustrates schematically in top view further steps of oneembodiment of a method 200 for forming the array 100 comprising theplurality of access transistors 104. FIG. 13 illustrates that thepreviously deposited amorphous silicon 204 has been transformed via asolid phase epitaxial growth process 206 to define the transistor body132 including the single crystalline body region 142. Following this, agate dielectric formation step 210 is performed wherein the gatedielectric 134 is grown or deposited in a well known manner to encompassthe transistor body 132. In a gate conductor formation step 212 isperformed to define the gate conductor structure 136. In one particularembodiment, the gate conductor formation 212 comprises depositingpolysilicon and performing a directional or anisotropic edge, such thatthe gate dielectric 134 and overlying gate conductor 136 are formed onthe sidewalls of the transistor body 132 to define the surround gatestructure 138.

FIG. 14 illustrates one embodiment of further steps in the method 200 offorming a memory array 100. In this embodiment, an isolation step 214 isperformed wherein dielectric material, such as silicon oxide, is filledin the interstitial spaces between adjacent access transistors 104.Following the isolation step 214, a planarization step 216 is performedin one embodiment by a chemical mechanical planarization/polishing (CMP)process. An implantation 218 of arsenic of approximately 1×10¹⁵/cm² isperformed into the top of the pillars 130 to form the doped drainregions 152. A trench formation step 220 is then performed to define aplurality of elongate trenches extending generally in the columndirection between adjacent columns of the access transistors 104. Then aword line formation step 222 is performed wherein polysilicon and/ormetal is deposited and directionally etched to form the address or wordlines 112 positioned along the side walls of the trenches and in contactwith the surround gate structures 138. The remainder of the structuresfor formation of the memory array 100, for example, including formationof the overlying charge storage devices 106, passivation, and formationof interconnect wiring then proceeds according to well knownconventional techniques.

Thus, various embodiments provide an array of access transistors 104which have a generally annular vertically extending transistor bodyhaving relatively thin side walls, in certain embodiments of a thicknessof approximately 20 nm. This provides access transistors 104 which canaccommodate continued aggressive scaling with reduced need forrelatively high doping levels to suppress short channel effects. Certainembodiments also avoid the requirement for fabricating the accesstransistors 104 at sub-lithographic dimensions as the transistor body132 is grown rather than etched. A solid phase epitaxial growth processcan provide a single crystalline body region 142 of ultra-thindimensions in a manner that is easier to fabricate than alternativeprocesses and structures.

Although the foregoing description of the preferred embodiment of thepresent invention has shown, described, and pointed out the fundamentalnovel features of the invention, it will be understood that variousomissions, substitutions, and changes in the form of the detail of theapparatus as illustrated, as well as the uses thereof, may be made bythose skilled in the art without departing from the spirit of thepresent invention.

1. A transistor comprising: a vertical annular semiconductive transistorbody; a surround gate structure formed around the annular transistorbody; a source region formed adjacent a lower portion of the body; and adrain region formed adjacent an upper portion of the body such that thetransistor defines a field effect transistor; wherein the transistorbody comprises a multiple grain region at an upper surface of the bodyand wherein the drain region is formed at the upper surface.
 2. Thetransistor of claim 1, further comprising a pillar extending within theannular transistor body.
 3. The transistor of claim 2, wherein thepillar comprises dielectric.
 4. The transistor of claim 1, wherein thegate structure comprises a gate dielectric formed around and adjacentthe annular transistor body and a gate conductor formed around andoverlying the gate dielectric.
 5. The transistor of claim 1, wherein thesource region is formed asymmetrically biased on at least one side ofthe annular transistor body.
 6. The transistor of claim 5, whereinconduction channels formed with appropriate potentials extend verticallyand asymmetrically along the one side of the annular body.
 7. Atransistor comprising: a vertical annular semiconductive transistorbody; a surround gate structure formed around the annular transistorbody; a source region formed adjacent a lower portion of the body; and adrain region formed adjacent an upper portion of the body such that thetransistor defines a field effect transistor; wherein the source regionis formed asymmetrically biased on at least one side of the annulartransistor body.
 8. The transistor of claim 7, further comprising apillar extending within the annular transistor body.
 9. The transistorof claim 8, wherein the pillar comprises dielectric.
 10. The transistorof claim 7, wherein the gate structure comprises a gate dielectricformed around and adjacent the annular transistor body and a gateconductor formed around and overlying the gate dielectric.
 11. Thetransistor of claim 7, wherein conduction channels formed withappropriate potentials extend vertically and asymmetrically along theone side of the annular body.